1. 通过比较提参后等效电路给出的S参数和实验测量的S参数，证明该方法的精度很高。
The final S-parameters simulated by the circuit model closely match experimental data.
2. 提参得到的等效电路模型对于射频电路设计者来说也是非常有用的。
The resulting circuit models will be very useful for RF circuit designers.
3. 提参
3. 利用ADS软件验证了提参结果，ADS仿真的直流I-V曲线和S参数与实测结果基本吻合。
The extraction results are verified by ADS software, and the DC I-V curves and S parameters simulated by ADS are basically accordant with those of the test results.